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Micron 8GB DDR4 SDRAM Memory (RAM) 1 Module MTA8ATF1G64AZ-2G6E1 2666 UDIMM
MTA8ATF1G64AZ – 8GB Features
• DDR4 functionality and operations supported as defined in the component data sheet
• 288-pin, unbuffered dual in-line memory module (UDIMM)
• Fast data transfer rates: PC4-3200, PC4-2666, or PC4-2400 • 8GB (1 Gig x 64)
• VDD = 1.20V (NOM) • VPP = 2.5V (NOM)
• VDDSPD = 2.5V (NOM)
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Gold edge contacts
• Halogen-free
• Fly-by topology
• Terminated control command and address bus
• DDR4 functionality and operations supported as defined in the component data sheet
• 288-pin, unbuffered dual in-line memory module (UDIMM)
• Fast data transfer rates: PC4-3200, PC4-2666, or PC4-2400 • 8GB (1 Gig x 64)
• VDD = 1.20V (NOM) • VPP = 2.5V (NOM)
• VDDSPD = 2.5V (NOM)
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Gold edge contacts
• Halogen-free
• Fly-by topology
• Terminated control command and address bus
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