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$65.00 Add to Cart

MRF373S RF Power Field Effect Transistors

MRF373S RF Power Field Effect Transistors

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  • MRF373S RF Power Field Effect Transistors
  • MRF373S RF Power Field Effect Transistors
  • MRF373S RF Power Field Effect Transistors
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  • Description
60 W, 470 – 860 MHz, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETS
Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this
device makes it ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.
• Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture
Output Power – 60 Watts
Power Gain – 13 dB
Efficiency – 50%
• Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture
Output Power – 100 Watts (PEP)
Power Gain – 11.2 dB
Efficiency – 40%
IMD – –30 dBc
• Excellent Thermal Stability
• 100% Tested for Load Mismatch Stress at All
Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz,
60 Watts CW
... [Full Description]

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